MOSFETs -30V, -4.1A, Single P-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
| Qg - Gate Charge | 8 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 1.56 W |
| Maximum Operating Temperature | + 150 C |
| Rds On - Drain-Source Resistance | 55 mOhms |
| Id - Continuous Drain Current | 4.1 A |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Packaging | Cut Tape, Reel |
| Technology | Si |