MOSFET 100V 70A N Channel Mosfet
Products specifications
| Rds On - Drain-Source Resistance | 10 mOhms |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 145 nC |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Technology | Si |
| Id - Continuous Drain Current | 70 A |
| Pd - Power Dissipation | 120 W, 8.3 W |
| Packaging | Reel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |