MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm
Products specifications
| Pd - Power Dissipation | 20 W |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Qg - Gate Charge | 9.7 nC |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 700 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 30 V |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 4.5 A |
| Packaging | Tube |
| Technology | Si |