MOSFET 75V 80A N Channel Mosfet
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Pd - Power Dissipation | 113.6 W, 2 W |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Id - Continuous Drain Current | 80 A |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Rds On - Drain-Source Resistance | 6 mOhms |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Configuration | Single |
| Qg - Gate Charge | 91.5 nC |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |