MOSFET 800V, 5.5A, Single N Channel Power MOSFET
Products specifications
| Vgs - Gate-Source Voltage | 10 V |
| Maximum Operating Temperature | + 150 C |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 5.5 A |
| Pd - Power Dissipation | 25 W |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Technology | Si |
| Packaging | Tube |
| Transistor Polarity | N-Channel |
| Mounting Style | Through Hole |
| Configuration | Single |
| Qg - Gate Charge | 19.4 nC |
| Channel Mode | Enhancement |
| Rds On - Drain-Source Resistance | 900 mOhms |