MOSFETs 800V, 12A, Single N-Channel Power MOSFET
Lead Time: 0 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 10 V |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Pd - Power Dissipation | 69 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 51 nC |
| Configuration | Single |
| Packaging | Tube |
| Id - Continuous Drain Current | 12 A |
| Mounting Style | Through Hole |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 300 mOhms |
| Number of Channels | 1 Channel |