MOSFETs 60V, 5A, Single N-Channel Power MOSFET
Lead Time: 112 Days
Products specifications
| Configuration | Single |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 9.3 nC |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 10 V |
| Pd - Power Dissipation | 4.7 W |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Packaging | Cut Tape, Reel |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 11 A |
| Rds On - Drain-Source Resistance | 76 mOhms |
| Minimum Operating Temperature | - |