MOSFET MOSFET, Single P-Ch, -20V, -6.4A
Products specifications
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | P-Channel |
| Qg - Gate Charge | 12 nC |
| Number of Channels | 1 Channel |
| Vgs - Gate-Source Voltage | 4.5 V |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 2.5 W |
| Configuration | Single |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 31 mOhms |
| Id - Continuous Drain Current | 6.4 A |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 400 mV |