MOSFETs 30V P Channel MOSFET
Products specifications
| Id - Continuous Drain Current | 5.3 A |
| Configuration | Single |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 2.5 W |
| Packaging | Reel |
| Rds On - Drain-Source Resistance | 50 mOhms |
| Number of Channels | 1 Channel |
| Technology | Si |
| Qg - Gate Charge | 9.52 nC |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vgs th - Gate-Source Threshold Voltage | 1 V |