MOSFET Dual 20V P channel Mosfet
Products specifications
| Technology | Si |
| Pd - Power Dissipation | 2 W |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel, PNP |
| Vgs - Gate-Source Voltage | 4.5 V |
| Configuration | Dual |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qg - Gate Charge | 6 nC |
| Packaging | Cut Tape, Reel |
| Rds On - Drain-Source Resistance | 48 mOhms |
| Id - Continuous Drain Current | 4.7 A |
| Number of Channels | 2 Channel |