MOSFET 900V 9Amp 1.4 N channel Mosfet
Products specifications
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Id - Continuous Drain Current | 9 A |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Packaging | Reel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 72 nC |
| Technology | Si |
| Pd - Power Dissipation | 89 W |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 1.13 Ohms |
| Channel Mode | Enhancement |