MOSFET 500V 9A 0.9Ohm Sng N-Chan Pwr MOSFET
Products specifications
| Pd - Power Dissipation | 50 W |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 24.5 nC |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 9 A |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Channel Mode | Enhancement |
| Configuration | Single |