Phototransistors Narrow Rcvng Angle 935nm
Lead Time: 126 Days
Products specifications
|
Pd - Power Dissipation
|
100 mW |
|
Maximum Operating Temperature
|
+ 100 C |
|
Product
|
Phototransistors |
|
Dark Current
|
100 nA |
|
Collector- Emitter Voltage VCEO Max
|
30 V |
|
Peak Wavelength
|
935 nm |
|
Collector-Emitter Breakdown Voltage
|
30 V |
|
Maximum On-State Collector Current
|
5.95 mA |
|
Mounting Style
|
Through Hole |
|
Collector-Emitter Saturation Voltage
|
0.4 V |
|
Minimum Operating Temperature
|
- 40 C |