Phototransistors Narrow Rcvng Angle 935nm
Lead Time: 119 Days
Products specifications
| Pd - Power Dissipation | 100 mW |
| Maximum Operating Temperature | + 100 C |
| Product | Phototransistors |
| Dark Current | 100 nA |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Peak Wavelength | 935 nm |
| Collector-Emitter Breakdown Voltage | 30 V |
| Maximum On-State Collector Current | 5.95 mA |
| Mounting Style | Through Hole |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Minimum Operating Temperature | - 40 C |