Phototransistors Photo Transistor
Lead Time: 119 Days
Products specifications
| Pd - Power Dissipation | 100 mW |
| Collector-Emitter Breakdown Voltage | 30 V |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Minimum Operating Temperature | - 40 C |
| Dark Current | 100 nA |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | + 100 C |
| Maximum On-State Collector Current | 4.7 mA |
| Product | Phototransistors |