Phototransistors NPN PHOTOTRANSISTOR
Products specifications
| Pd - Power Dissipation | 50 mW |
| Fall Time | 20 us |
| Collector-Emitter Breakdown Voltage | 50 V |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Rise Time | 20 us |
| Product | Phototransistors |
| Maximum Operating Temperature | + 125 C |
| Mounting Style | Panel Mount |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Dark Current | 25 nA |