Phototransistors Photo Transistor
Lead Time: 126 Days
Products specifications
|
Operating Supply Voltage
|
890 nm |
|
Peak Wavelength
|
890 nm, Through Hole |
|
Maximum Operating Temperature
|
+ 125 C, - 65 C |
|
Collector-Emitter Saturation Voltage
|
30 V |
|
Maximum On-State Collector Current
|
5.4 mA |
|
Collector-Emitter Breakdown Voltage
|
30 V |
|
Rise Time
|
100 nA, 7 us |
|
Series
|
+ 125 C |
|
Collector- Emitter Voltage VCEO Max
|
30 V, 5.4 mA |
|
Minimum Operating Temperature
|
- 65 C, 250 mW |
|
Pd - Power Dissipation
|
250 mW, 7 us |
|
Mounting Style
|
Through Hole, TO-18-3 |
|
Dark Current
|
100 nA |
|
Product
|
Phototransistors |
|
Fall Time
|
7 us |