Phototransistors Photo Transistor
Lead Time: 119 Days
Products specifications
| Operating Supply Voltage | 890 nm |
| Peak Wavelength | 890 nm, Through Hole |
| Maximum Operating Temperature | + 125 C, - 65 C |
| Collector-Emitter Saturation Voltage | 30 V |
| Maximum On-State Collector Current | 5.4 mA |
| Collector-Emitter Breakdown Voltage | 30 V |
| Rise Time | 100 nA, 7 us |
| Series | + 125 C |
| Collector- Emitter Voltage VCEO Max | 30 V, 5.4 mA |
| Minimum Operating Temperature | - 65 C, 250 mW |
| Pd - Power Dissipation | 250 mW, 7 us |
| Mounting Style | Through Hole, TO-18-3 |
| Dark Current | 100 nA |
| Product | Phototransistors |
| Fall Time | 7 us |