Phototransistors Photo Transistor
Products specifications
| Dark Current | 100 nA |
| Mounting Style | Through Hole |
| Product | Phototransistors |
| Collector-Emitter Breakdown Voltage | 30 V |
| Maximum Operating Temperature | + 125 C |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 250 mW |
| Peak Wavelength | 890 nm |
| Fall Time | 7 us |
| Rise Time | 7 us |
| Collector- Emitter Voltage VCEO Max | 30 V |