Phototransistors TO-18, NPN Si Photo transistor
Products specifications
| Maximum Operating Temperature | + 125 C |
| Dark Current | 100 nA |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Collector-Emitter Breakdown Voltage | 30 V |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 5 V |
| Minimum Operating Temperature | - 55 C |
| Product | Phototransistors |
| Pd - Power Dissipation | 250 mW |