Phototransistors TO-18, NPN SILICON PHOTO TRANSISTOR
Products specifications
| Dark Current | 100 nA |
| Rise Time | 15 us |
| Maximum Operating Temperature | + 125 C |
| Product | Phototransistors |
| Maximum On-State Collector Current | 8 mA |
| Pd - Power Dissipation | 250 mW |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Fall Time | 15 us |
| Collector-Emitter Saturation Voltage | 0.4 V |