RF Amplifier 978-1090 MHz, 250 W Peak, 50 V
Products specifications
| Transistor Polarity | N-Channel |
| Technology | Si |
| Product Type | RF MOSFET Transistors |
| Output Power | 250 W |
| Gain | 32.1 dB |
| Minimum Operating Temperature | - 40 C |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 100 V |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 1.6 A |