RF MOSFET Transistors Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
Lead Time: 365 Days
Products specifications
|
Vds - Drain-Source Breakdown Voltage
|
30 V |
|
Gain
|
15 dB |
|
Maximum Operating Temperature
|
+ 150 C |
|
Id - Continuous Drain Current
|
3 A |
|
Technology
|
Si |
|
Output Power
|
8 W |
|
Minimum Operating Temperature
|
- 40 C |
|
Transistor Polarity
|
N-Channel |
|
Product Type
|
RF MOSFET Transistors |