RF MOSFET Transistors RF Power
Lead Time: 84 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Gain | 15 dB |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 3 A |
| Technology | Si |
| Output Power | 8 W |
| Minimum Operating Temperature | - 40 C |
| Transistor Polarity | N-Channel |
| Product Type | RF MOSFET Transistors |