AFT05MS003NT1

RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
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SKU: AFT05MS003NT1

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R 55.11

R 49.47

R 46.65

R 39.99

R 35.12

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RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
Lead Time: 0 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Gain	20.8 dB
Transistor Polarity	N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	- 500 mV, 30 V
Product Type	RF MOSFET Transistors
Output Power	3.2 W
Id - Continuous Drain Current	2.6 A

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Products specifications

Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 40 C
Gain	20.8 dB
Transistor Polarity	N-Channel
Technology	Si
Vds - Drain-Source Breakdown Voltage	- 500 mV, 30 V
Product Type	RF MOSFET Transistors
Output Power	3.2 W
Id - Continuous Drain Current	2.6 A