RF MOSFET Transistors Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V
Products specifications
|
Technology
|
Si |
|
Packaging
|
Reel |
|
Gain
|
17.7 dB |
|
Id - Continuous Drain Current
|
2.6 A |
|
Minimum Operating Temperature
|
- 40 C |
|
Product Type
|
RF MOSFET Transistors |
|
Output Power
|
1 kW |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 105 V |
|
Maximum Operating Temperature
|
+ 150 C |
|
Transistor Polarity
|
N-Channel |