RF MOSFET Transistors Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V
Products specifications
| Technology | Si |
| Packaging | Reel |
| Gain | 17.7 dB |
| Id - Continuous Drain Current | 2.6 A |
| Minimum Operating Temperature | - 40 C |
| Product Type | RF MOSFET Transistors |
| Output Power | 1 kW |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 105 V |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |