RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Products specifications
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 150 C |
| Gain | 19.6 dB |
| Minimum Operating Temperature | - 40 C |
| Id - Continuous Drain Current | 2.6 A |
| Output Power | 1 kW |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 112 V |
| Packaging | Reel |
| Product Type | RF MOSFET Transistors |
| Technology | Si |