RF Development Tools MMRF5014H 500-2500 MHz Reference Circuit
Products specifications
| Gain | 18 dB |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | P-Channel |
| Output Power | 125 W |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 350 mA |
| Technology | GaN SiC |
| Minimum Operating Temperature | - 55 C |