MMRF5300NR5

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RF MOSFET Transistors 2700-3500 MHz, 60 W PEAK, 50V WIDEBAND RF POWER GaN TRANSISTOR

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RF MOSFET Transistors 2700-3500 MHz, 60 W PEAK, 50V WIDEBAND RF POWER GaN TRANSISTOR

Products specifications

Vds - Drain-Source Breakdown Voltage	125 V
Technology	GaN
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	70 mA
Output Power	60 W
Product Type	RF MOSFET Transistors
Gain	17 dB
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	125 V
Technology	GaN
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	70 mA
Output Power	60 W
Product Type	RF MOSFET Transistors
Gain	17 dB
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C