MRF085HR5

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RF MOSFET Transistors High Ruggedness N--Channel

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RF MOSFET Transistors High Ruggedness N--Channel

Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 133 V
Maximum Operating Temperature	+ 150 C
Gain	25.6 dB
Technology	Si
Output Power	85 W
Id - Continuous Drain Current	210 mA
Transistor Polarity	Dual N-Channel
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors

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Products specifications

Vds - Drain-Source Breakdown Voltage	- 500 mV, 133 V
Maximum Operating Temperature	+ 150 C
Gain	25.6 dB
Technology	Si
Output Power	85 W
Id - Continuous Drain Current	210 mA
Transistor Polarity	Dual N-Channel
Minimum Operating Temperature	- 40 C
Product Type	RF MOSFET Transistors