RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Products specifications
| Gain | 23 dB |
| Transistor Polarity | N-Channel |
| Output Power | 1.5 kW |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 40 C |
| Vds - Drain-Source Breakdown Voltage | 133 V |
| Id - Continuous Drain Current | 36 A |
| Maximum Operating Temperature | + 150 C |