RF MOSFET Transistors VHV6 250W 50V NI780H
Products specifications
| Vds - Drain-Source Breakdown Voltage | 110 V |
| Output Power | 27.5 W |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Gain | 20.3 dB |
| Packaging | Cut Tape, MouseReel, Reel |
| Transistor Polarity | N-Channel |
| Product Type | RF MOSFET Transistors |