RF MOSFET Transistors VHV6 10W TO270-2GN
Products specifications
| Packaging | Cut Tape, Reel |
| Maximum Operating Temperature | + 150 C |
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 110 V |
| Gain | 23.9 dB |
| Transistor Polarity | N-Channel |
| Output Power | 10 W |
| Technology | Si |