RF MOSFET Transistors VHV6 50V 4.5W TO270WB4
Products specifications
| Product Type | RF MOSFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 115 V |
| Gain | 21.8 dB |
| Technology | Si |
| Output Power | 18 W |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 150 C |
| Packaging | Reel |