RF MOSFET Transistors HV8 2GHZ 165W NI780-4
Products specifications
| Product Type | RF MOSFET Transistors |
| Gain | 16.3 dB |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Transistor Polarity | N-Channel |
| Output Power | 28 W |
| Maximum Operating Temperature | + 125 C |
| Technology | Si |