RF MOSFET Transistors HV8 900MHz 63W
Products specifications
| Maximum Operating Temperature | + 150 C |
| Packaging | Reel |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Transistor Polarity | N-Channel |
| Output Power | 63 W |
| Gain | 16.9 dB |
| Product Type | RF MOSFET Transistors |