RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
Products specifications
| Gain | 19.2 dB |
| Id - Continuous Drain Current | 1.3 A |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Output Power | 350 W |
| Product Type | RF MOSFET Transistors |
| Transistor Polarity | Dual N-Channel |
| Minimum Operating Temperature | - 40 C |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 100 V |