MRFE6S9125NBR1

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RF MOSFET Transistors HV6E 125W

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RF MOSFET Transistors HV6E 125W

Products specifications

Minimum Operating Temperature	- 65 C
Transistor Polarity	N-Channel
Output Power	27 W
Maximum Operating Temperature	+ 150 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 66 V
Product Type	RF MOSFET Transistors
Gain	20.2 dB
Technology	Si

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Products specifications

Minimum Operating Temperature	- 65 C
Transistor Polarity	N-Channel
Output Power	27 W
Maximum Operating Temperature	+ 150 C
Packaging	Reel
Vds - Drain-Source Breakdown Voltage	- 500 mV, 66 V
Product Type	RF MOSFET Transistors
Gain	20.2 dB
Technology	Si