2SB1122T-TD-E

Bipolar Transistors - BJT BIP PNP 1A 50V
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SKU: 2SB1122T-TD-E

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R 19.22

R 11.77

R 7.66

R 5.84

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R 4.51

R 3.95

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Bipolar Transistors - BJT BIP PNP 1A 50V
Lead Time: 0 Days

Products specifications

Collector-Emitter Saturation Voltage	- 180 mV
Gain Bandwidth Product fT	150 MHz
Configuration	Single
Series	2SB1122
Collector- Base Voltage VCBO	- 60 V
Emitter- Base Voltage VEBO	- 5 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 50 V
Maximum DC Collector Current	- 1 A

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Products specifications

Collector-Emitter Saturation Voltage	- 180 mV
Gain Bandwidth Product fT	150 MHz
Configuration	Single
Series	2SB1122
Collector- Base Voltage VCBO	- 60 V
Emitter- Base Voltage VEBO	- 5 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 50 V
Maximum DC Collector Current	- 1 A