2SB1201S-E

Bipolar Transistors - BJT BIP PNP 2A 50V
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SKU: 2SB1201S-E

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R 34.09

R 21.51

R 14.23

R 11.66

R 10.07

R 8.36

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Bipolar Transistors - BJT BIP PNP 2A 50V
Lead Time: 0 Days

Products specifications

Series	2SB1201
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product fT	150 MHz
Configuration	Single
Transistor Polarity	NPN, PNP
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	60 V
Maximum DC Collector Current	4 A, - 4 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	150 mV, - 300 mV
Emitter- Base Voltage VEBO	6 V, - 6 V

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Products specifications

Series	2SB1201
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product fT	150 MHz
Configuration	Single
Transistor Polarity	NPN, PNP
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	60 V
Maximum DC Collector Current	4 A, - 4 A
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	150 mV, - 300 mV
Emitter- Base Voltage VEBO	6 V, - 6 V