2SC3649T-TD-E

Bipolar Transistors - BJT BIP NPN 1.5A 160V
Lead Time: 364 Days

SKU: 2SC3649T-TD-E

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Bipolar Transistors - BJT BIP NPN 1.5A 160V
Lead Time: 364 Days

Products specifications

Series	2SC3649
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	6 V
Collector- Base Voltage VCBO	180 V
Transistor Polarity	NPN
Gain Bandwidth Product fT	120 MHz
Collector- Emitter Voltage VCEO Max	160 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 200 mV, 130 mV

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Products specifications

Series	2SC3649
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	6 V
Collector- Base Voltage VCBO	180 V
Transistor Polarity	NPN
Gain Bandwidth Product fT	120 MHz
Collector- Emitter Voltage VCEO Max	160 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 200 mV, 130 mV