2SC5551AE-TD-E

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Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz

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Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz

Products specifications

Emitter- Base Voltage VEBO	2 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	0.3 V
Gain Bandwidth Product fT	3.5 GHz
Transistor Polarity	NPN
Collector- Base Voltage VCBO	40 V
Collector- Emitter Voltage VCEO Max	30 V
Maximum DC Collector Current	300 mA
Series	2SC5551A

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Products specifications

Emitter- Base Voltage VEBO	2 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Collector-Emitter Saturation Voltage	0.3 V
Gain Bandwidth Product fT	3.5 GHz
Transistor Polarity	NPN
Collector- Base Voltage VCBO	40 V
Collector- Emitter Voltage VCEO Max	30 V
Maximum DC Collector Current	300 mA
Series	2SC5551A