2SC5566-TD-E

Bipolar Transistors - BJT BIP NPN 4A 50V
Lead Time: 147 Days

SKU: 2SC5566-TD-E

Availability: 7405 in stock

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R 22.56

R 14.15

R 10.18

R 7.87

R 6.41

R 5.92

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Bipolar Transistors - BJT BIP NPN 4A 50V
Lead Time: 364 Days

Products specifications

Gain Bandwidth Product fT	360 MHz, 400 MHz
Collector- Emitter Voltage VCEO Max	- 50 V, 50 V
Collector-Emitter Saturation Voltage	- 105 V, 85 V
Transistor Polarity	NPN
Series	2SC5566
Emitter- Base Voltage VEBO	- 6 V, 6 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	- 50 V, 100 V

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Products specifications

Gain Bandwidth Product fT	360 MHz, 400 MHz
Collector- Emitter Voltage VCEO Max	- 50 V, 50 V
Collector-Emitter Saturation Voltage	- 105 V, 85 V
Transistor Polarity	NPN
Series	2SC5566
Emitter- Base Voltage VEBO	- 6 V, 6 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	- 50 V, 100 V