2SC5964-TD-E

Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
Lead Time: 112 Days

SKU: 2SC5964-TD-E

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R 16.40

R 10.48

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R 6.41

R 5.74

R 4.95

R 4.41

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Bipolar Transistors - BJT HIGH-CURRENT SWITCHING

Products specifications

Maximum Operating Temperature	+ 150 C
Series	2SC5964
Collector-Emitter Saturation Voltage	- 125 mV, 100 mV
Collector- Base Voltage VCBO	- 50 V, 100 V
Transistor Polarity	NPN, PNP
Gain Bandwidth Product fT	390 MHz, 380 MHz
Configuration	Single
Emitter- Base Voltage VEBO	- 6 V, 6 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	- 50 V, 50 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Series	2SC5964
Collector-Emitter Saturation Voltage	- 125 mV, 100 mV
Collector- Base Voltage VCBO	- 50 V, 100 V
Transistor Polarity	NPN, PNP
Gain Bandwidth Product fT	390 MHz, 380 MHz
Configuration	Single
Emitter- Base Voltage VEBO	- 6 V, 6 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	- 50 V, 50 V