2SC6096-TD-H

Bipolar Transistors - BJT BIP NPN 2A 100V
Lead Time: 147 Days

SKU: 2SC6096-TD-E

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R 27.43

R 17.12

R 11.46

R 8.84

R 8.02

R 6.95

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Bipolar Transistors - BJT BIP NPN 2A 100V

Products specifications

Collector-Emitter Saturation Voltage	100 mV
Emitter- Base Voltage VEBO	6.5 V
Series	2SC6096
Collector- Base Voltage VCBO	120 V
Maximum DC Collector Current	3 A
Transistor Polarity	NPN
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	100 V
Gain Bandwidth Product fT	300 MHz

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Products specifications

Collector-Emitter Saturation Voltage	100 mV
Emitter- Base Voltage VEBO	6.5 V
Series	2SC6096
Collector- Base Voltage VCBO	120 V
Maximum DC Collector Current	3 A
Transistor Polarity	NPN
Configuration	Single
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	100 V
Gain Bandwidth Product fT	300 MHz