MOSFET NFET 60V 115MA 7.5O
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 300 mW |
| Id - Continuous Drain Current | 75 mA |
| Qualification | AEC-Q101 |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 10 V |
| Technology | Si |
| Number of Channels | 1 Channel |
| Packaging | Cut Tape, MouseReel, Reel |