Bipolar Transistors - BJT 100mA 60V Dual NPN
Products specifications
| Series | EMX2DXV6 |
| Configuration | Dual |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Emitter- Base Voltage VEBO | 7 V |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | NPN |
| Maximum DC Collector Current | 0.1 A |
| Gain Bandwidth Product fT | 180 MHz |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 50 V |