HN1B01FDW1T1G

Bipolar Transistors - BJT 200mA 60V Dual Complementary
Lead Time: 105 Days

SKU: HN1B01FDW1T1G

Availability: 7002 in stock

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Bipolar Transistors - BJT 200mA 60V Dual Complementary
Lead Time: 105 Days

Products specifications

Collector-Emitter Saturation Voltage	- 0.15 V
Emitter- Base Voltage VEBO	7 V
Maximum DC Collector Current	0.2 A
Transistor Polarity	NPN, PNP
Collector- Base Voltage VCBO	60 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Dual
Maximum Operating Temperature	+ 150 C
Series	HN1B01FDW1

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Products specifications

Collector-Emitter Saturation Voltage	- 0.15 V
Emitter- Base Voltage VEBO	7 V
Maximum DC Collector Current	0.2 A
Transistor Polarity	NPN, PNP
Collector- Base Voltage VCBO	60 V
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	50 V
Configuration	Dual
Maximum Operating Temperature	+ 150 C
Series	HN1B01FDW1