MMBT5401WT1G

Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor
Lead Time: 112 Days

SKU: MMBT5401WT1G

Availability: 8095 in stock

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R 7.43

R 4.28

R 2.72

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R 1.21

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Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor
Lead Time: 112 Days

Products specifications

Transistor Polarity	PNP
Technology	Si
Collector- Emitter Voltage VCEO Max	- 150 V
Configuration	Single
Series	MMBT5401W
Collector- Base Voltage VCBO	- 160 V
Collector-Emitter Saturation Voltage	- 200 mV
Gain Bandwidth Product fT	300 MHz
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	- 500 mA
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	- 5 V

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Products specifications

Transistor Polarity	PNP
Technology	Si
Collector- Emitter Voltage VCEO Max	- 150 V
Configuration	Single
Series	MMBT5401W
Collector- Base Voltage VCBO	- 160 V
Collector-Emitter Saturation Voltage	- 200 mV
Gain Bandwidth Product fT	300 MHz
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	- 500 mA
Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	- 5 V