MSD601-RT1G

Bipolar Transistors - BJT 100mA 60V NPN
Lead Time: 98 Days

SKU: MSD601-RT1G

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Bipolar Transistors - BJT 100mA 60V NPN

Products specifications

Transistor Polarity	NPN
Maximum DC Collector Current	0.1 A
Collector-Emitter Saturation Voltage	0.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V
Series	MSD601-R
Emitter- Base Voltage VEBO	7 V
Collector- Base Voltage VCBO	60 V

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Products specifications

Transistor Polarity	NPN
Maximum DC Collector Current	0.1 A
Collector-Emitter Saturation Voltage	0.5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V
Series	MSD601-R
Emitter- Base Voltage VEBO	7 V
Collector- Base Voltage VCBO	60 V