NSS1C300ET4G

Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) PNP Transistor
Lead Time: 189 Days

SKU: NSS1C300ET4G

Availability: 3409 in stock

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R 36.40

R 22.89

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R 11.89

R 10.82

R 9.64

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Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) PNP Transistor
Lead Time: 119 Days

Products specifications

Series	NSS1C300E
Maximum DC Collector Current	3 A
Gain Bandwidth Product fT	100 MHz
Collector-Emitter Saturation Voltage	0.4 V
Collector- Emitter Voltage VCEO Max	100 V
Minimum Operating Temperature	- 65 C
Collector- Base Voltage VCBO	140 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Configuration	Single
Emitter- Base Voltage VEBO	6 V

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Products specifications

Series	NSS1C300E
Maximum DC Collector Current	3 A
Gain Bandwidth Product fT	100 MHz
Collector-Emitter Saturation Voltage	0.4 V
Collector- Emitter Voltage VCEO Max	100 V
Minimum Operating Temperature	- 65 C
Collector- Base Voltage VCBO	140 V
Maximum Operating Temperature	+ 150 C
Transistor Polarity	PNP
Configuration	Single
Emitter- Base Voltage VEBO	6 V