NSS40200UW6T1G

Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -40 V, 2.0 A

SKU: NSV40200UW6T1G

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Quantity

3000+

Price

R 8.36

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Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -40 V, 2.0 A

Products specifications

Emitter- Base Voltage VEBO	7 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 40 V
Gain Bandwidth Product fT	140 MHz
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 40 V
Maximum DC Collector Current	2 A
Series	NSS40200UW6T1G
Collector-Emitter Saturation Voltage	- 0.1 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Emitter- Base Voltage VEBO	7 V
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 40 V
Gain Bandwidth Product fT	140 MHz
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 40 V
Maximum DC Collector Current	2 A
Series	NSS40200UW6T1G
Collector-Emitter Saturation Voltage	- 0.1 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C