NSV1C200MZ4T1G

Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 100 V, 2.0 A

SKU: NSV1C200MZ4T1G

Availability: 1980 in stock

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R 23.35

R 14.48

R 9.43

R 7.25

R 6.51

R 5.61

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Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 100 V, 2.0 A
Lead Time: 182 Days

Products specifications

Gain Bandwidth Product fT	120 MHz
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 0.22 V
Series	NSS1C200
Collector- Emitter Voltage VCEO Max	- 100 V
Configuration	Single
Emitter- Base Voltage VEBO	- 7 V
Maximum DC Collector Current	3 A
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 140 V

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Products specifications

Gain Bandwidth Product fT	120 MHz
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector-Emitter Saturation Voltage	- 0.22 V
Series	NSS1C200
Collector- Emitter Voltage VCEO Max	- 100 V
Configuration	Single
Emitter- Base Voltage VEBO	- 7 V
Maximum DC Collector Current	3 A
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 140 V